Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1998-03-19
1999-10-12
Fourson, George R.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
H04L 21762
Patent
active
059666161
ABSTRACT:
A method of manufacturing a semiconductor device, in which trenches (7) are formed in a surface (2) of a silicon body (1), which trenches are filled with silicon oxide (11). The filled trenches are used as field-oxide regions (12) in integrated circuits. The silicon oxide is deposited from a gas phase and is subsequently densified by means of a thermal treatment in an NO or N.sub.2 O-containing atmosphere. The deposited silicon oxide can be densified in a very short period of time, and, in addition, the thermal treatment does not cause crystal defects. The method can suitably be used for "single wafer processing".
REFERENCES:
patent: 5387540 (1995-02-01), Poon et al.
patent: 5643825 (1997-07-01), Gardner et al.
"An Optimized Densification of the Filled Oxide for Quarter Micron Shallow Trench Isolation (STI)", H.S. Lee et al., Digest of Technical Papers of IEEE Symposium on VLSI Technology, 1996, pp. 158-159.
Fourson George R.
U.S. Philips Corporation
Wieghaus Brian J.
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