Method of manufacturing a semiconductor device having rounded tr

Details Method of manufacturing a semiconductor device having rounded tr Method of manufacturing a semiconductor device having rounded tr

1988-06-09

1990-04-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, H01L 2176

Patent

active

049160869

ABSTRACT:
A method of manufacturing a semiconductor having a trench region is disclosed. After an etching process for forming an trench region in a substrate, the corners of the trench region are covered with a polycrystalline layer. The structure is subjected to an oxidation treatment. Since the polycrystalline layer covers the corners roundly, the oxidation results in semiconductor islands having rounded corners.

REFERENCES:
patent: 4645564 (1987-02-01), Morie et al.
patent: 4666556 (1987-05-01), Fulton et al.
patent: 4693781 (1987-09-01), Leung et al.

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