Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1996-01-22
1999-09-21
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making passive device
Resistor
438791, 438958, H01L 2120
Patent
active
059565926
ABSTRACT:
A method of manufacturing a semiconductor device by forming first and second resistor layers of polycrystalline silicon including impurities on a first insulation film with a predetermined distance therebetween. The resistor layer have a resistance ratio set to a predetermined value. A second insulation film is formed on the first and second resistor layers and has an opening in a predetermined region. A metal layer electrically connected to the first and second resistor layers is formed in the opening and extends onto the second insulation film. The metal layer is patterned to form a first metal interconnection layer electrically connected to the first resistor layer and a second metal interconnection layer electrically connected to the second resistor layer. The first metal interconnection layer partially covers the first resistor layer. The second metal interconnection layer partially covers the second resistor layer. A plasma nitride film is formed on the first metal interconnection layer, second metal interconnection layer, first metal layer and second metal layer. The first and said second metal layers are patterned so that the overlapping area ratio between the first resistor layer and the first metal interconnection layer is substantially equal to the overlapping area ratio between the second resistor layer and the second metal layer.
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Bowers Jr. Charles L.
Mitsubishi Denki & Kabushiki Kaisha
Thomas Toniae M.
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