Method of manufacturing a semiconductor device having interconne

Details Method of manufacturing a semiconductor device having interconne Method of manufacturing a semiconductor device having interconne

1992-04-13

1992-12-15

Quach, T. N.

Fishing, trapping, and vermin destroying

437 40, 437 69, 437186, 437228, 156657, H01L 2131, H01L 21283

Patent

active

051717140

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed which may form a very minute interconnection pattern having line width less than that of an interconnection pattern formed by a photolithography technique. In the method of manufacturing a semiconductor device, after patterning by a photolithography technique polysilicon layer 3a and nitride layer 4a laminated in order on semiconductor silicon substrate 1, an oxide film is formed in a self-alignment manner in the polysilicon layer by thermal oxidation treatment at a high temperature and a nitride film is removed by etching back the whole surface. The polysilicon layer is divided into two by carrying out etching with the oxide film used as mask. It is possible to form two interconnection patterns in the space for one interconnection pattern formed by a photolithography technique using such a manufacturing method.

REFERENCES:
patent: 4352238 (1982-10-01), Shimbo
patent: 4717689 (1988-01-01), Maas et al.
patent: 4812418 (1989-03-01), Pfiester et al.
patent: 5028559 (1991-07-01), Zdebel et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device having interconne does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device having interconne, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having interconne will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2092716