Method of manufacturing a semiconductor device having interconne

Details Method of manufacturing a semiconductor device having interconne Method of manufacturing a semiconductor device having interconne

1989-11-06

1990-11-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 59, 437 69, 437183, 437190, 437192, 437228, 148DIG20, 148DIG105, 357 71, H01L 21283

Patent

active

049735624

ABSTRACT:
A method of manufacturing a semiconductor device, in which a first pattern of conductors (20), an isolating layer (21) and a second pattern of conductors (22) are successively provided on a surface (2) of a semiconductor body (1) adjoined by a number of isolation regions (4, 10) and a number of semiconductor regions (3). Mutual contacts are established between the two patterns (20, 22) and these contacts are located both above a semiconductor region (3) and above an adjoining isolation region (4, 10) by forming conductive pillars (44) in the first pattern (20), exposing a tip (51) of the pillars (44) after an isolating layer (50) has been provided and providing the second pattern (22) over the tip (51) of the pillars (44). Thus, a large amount is saved on the surface (2).

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Wong, S. et al., "HPSAC-A Silicided . . . ", IEEE Trans. Elec. Dev., vol. ED-34, No. 3, Mar. 1987, pp. 587-592.

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