Method of manufacturing a semiconductor device having improved c

Details Method of manufacturing a semiconductor device having improved c Method of manufacturing a semiconductor device having improved c

1990-10-16

1992-05-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437913, 437156, 437160, 437189, H01L 2120

Patent

active

051167808

ABSTRACT:
A multi-layered insulation film of non-doped CVD SiO.sub.2 (silicon dioxide) film and BPSG (boro-phospho-silicate glass) film is formed on a silicon substrate. Films have a contact hole exposing impurity diffused region formed in silicon substrate. A semiconductor layer is formed in the contact hole. An Al (aluminum) film is formed on the semiconductor layer. The semiconductor layer contacts the BPSG film so that the contact resistance between the semiconductor layer and the Al (aluminum) film can be reduced, and a variation of the contact resistance between respective semiconductor devices can also be reduced.

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