Method of manufacturing a semiconductor device having conductive

Details Method of manufacturing a semiconductor device having conductive Method of manufacturing a semiconductor device having conductive

1992-03-10

1993-08-31

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437195, 437230, H01L 21441

Patent

active

052408795

ABSTRACT:
A semiconductor body has a surface structure (10) with an insulating layer (11) through which is formed an opening (12) defining a side wall (13) of insulating material bounding an exposed surface area (14a) of a region (14). An activating layer (15) is provided on the exposed surface area (14a) and the side wall (13) of the opening (12), and electrically conductive material deposited on the activating layer (15) to form an electrically conductive region (16) in the opening (12). The activating layer is provided so that the material (15a) on the sidewall (13) has different composition from the material (15b) on the exposed surface area (14a) and is selectively etched to remove the material (15a) from the sidewall (13) of the opening (12) leaving only the activating layer portion (15b) on the surface area (14a) of the underlying region so that little or no deposition of the electrically conductive material occurs on the opening sidewall (13), thereby inhibiting sideways growth of the electrically conductive material and thus avoiding or at least reducing the possibility of voids being formed in the electrically conductive region.

REFERENCES:
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 5055423 (1991-10-01), Smith et al.
Ting, C. H., et al., "Selective Electroless Metal Deposition . . . " J. Electrochem. Soc. vol. 136, No. 2, Feb. 1989, pp. 456-462.
European Search Report of EP 92 20 0697.

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