Method of manufacturing a semiconductor device having closely sp

Details Method of manufacturing a semiconductor device having closely sp Method of manufacturing a semiconductor device having closely sp

1974-03-13

1976-11-30

Van Horn, Charles E.

Adhesive bonding and miscellaneous chemical manufacture

Methods

29578, 29579, 29591, 156 11, 156 13, 156 17, 156 18, 427 89, H01L 21441

Patent

active

039947580

ABSTRACT:
A Shottky barrier gate field effect transistor is produced by etching a first conductive film formed on a semiconductor crystal surface using a mask to leave a first conductive film area smaller than the area of the mask and projecting a second conductive material on to the surface perpendicularly thereof. The second conductive film areas thus formed and the first conductive film area serve as the source and drain electrodes and the gate electrodes, respectively.

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