Method of manufacturing a semiconductor device having at least o

Details Method of manufacturing a semiconductor device having at least o Method of manufacturing a semiconductor device having at least o

1974-12-19

1976-08-10

Edlow, Martin H.

357 41, 357 23, H01L 2702

Patent

active

039745163

ABSTRACT:
A method of manufacturing a semiconductor device having an insulated gate field effect transistor in which a second region of the second conductivity type is indiffused in a first region of the first conductivity type and source and drain zones of the first conductivity type are provided in said second region. According to the invention, after the indiffusion, the doping material of the second region is outdiffused in an atmosphere of reduced pressure, preferably in a vacuum, in which a zone of maximum doping concentration is formed which may advantageously be used as a channel stopper and the source and drain zones are provided in the part of the second region having a doping concentration which increases from the surface. The method is preferably used for the manufacture of structures having complementary field effect transistors.

REFERENCES:
patent: 3470390 (1969-09-01), Lin
patent: 3514845 (1970-06-01), Legot
patent: 3556966 (1971-01-01), Waxman
patent: 3588635 (1971-06-01), Medwin
patent: 3609479 (1971-09-01), Lin
patent: 3615938 (1971-11-01), Tsar
patent: 3786318 (1974-01-01), Momoi

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