Method of manufacturing a semiconductor device having an SOI str

Details Method of manufacturing a semiconductor device having an SOI str Method of manufacturing a semiconductor device having an SOI str

1994-11-16

1996-04-30

Thomas, Tom

Fishing, trapping, and vermin destroying

148DIG150, 437 52, H01L 2186

Patent

active

055125018

ABSTRACT:
In etching a polysilicon layer above a gate electrode layer, a portion of the gate electrode layer is left thereunder. The etching process of that polysilicon layer and that gate electrode layer is carried out in two steps of etching the polysilicon layer and an interlayer insulating layer, and etching the gate electrode layer and the gate oxide film. Therefore, the amount that is removed from an SOI layer can be suppressed in the manufacturing process thereof.

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patent: 4173818 (1979-11-01), Bassous et al.
patent: 4621276 (1986-11-01), Malhi
patent: 4677735 (1987-07-01), Malhi
patent: 5008212 (1991-04-01), Chen
patent: 5125007 (1992-06-01), Yamauguchi et al.
patent: 5278082 (1994-01-01), Kawamura
patent: 5302542 (1994-04-01), Kishi et al.

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