Method of manufacturing a semiconductor device having an SOI str

Details Method of manufacturing a semiconductor device having an SOI str Method of manufacturing a semiconductor device having an SOI str

1989-04-03

1990-05-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 67, 437927, 437 65, H01L 2176

Patent

active

049258052

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device comprising a semiconductor body (1) having a buried insulating layer (7). Such a type of semiconductor device is known as a device of the SOI type. According to the invention, the starting material is a substrate (1) of monocrystalline semiconductor material with a top layer (2). Ions are implanted into a zone located under the top layer so that the zone becomes selectively etchable with respect to the remaining part of the substrate. The zone is then etched away, a cavity then being formed between the top layer (2) and the remaining part of the substrate (1). The cavity is filled at least in part with insulating material (7). By known techniques, semiconductor circuit elements can be provided in the top layer (2) thus disposed on the insulating layer (7).

REFERENCES:
patent: 4264382 (1981-04-01), Anantha et al.
patent: 4333227 (1982-06-01), Horng et al.
Blum et al., IBM Tech. Discl. Bull., vol. 21, No. 9 (Feb. 1979), pp. 3814-3817.

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