Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Patent
1997-04-25
1999-08-24
Brown, Peter Toby
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
438380, 438361, 438425, 438426, 438427, 438428, 438429, 438430, 438436, 438437, H01L 21331
Patent
active
059435780
ABSTRACT:
The first trench is formed in the region of the semiconductor substrate, in which an element isolation region is to be formed, and the first buried member, which is insulative, is buried in the first trench. Then, the second trench, having a width smaller than that of the first trench, is made in the first buried member, and the portion of the semiconductor substrate which is located at the bottom portion of the first trench, and the insulating second buried member is buried in the second trench, thereby forming the element isolation region.
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Katakabe Ichiro
Kawamoto Hiroshi
Miyashita Naoto
Brown Peter Toby
Kabushiki Kaisha Toshiba
Pham Long
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