Method of manufacturing a semiconductor device having a trench s

Details Method of manufacturing a semiconductor device having a trench s Method of manufacturing a semiconductor device having a trench s

1996-05-10

1998-08-18

Trinh, Michael

Fishing, trapping, and vermin destroying

437 24, 437 72, 437203, H01L 218232

Patent

active

057957924

ABSTRACT:
A trench is formed on a main surface of a p+ type monocrystalline silicon substrate. A silicon oxide film is formed extending from the inner surface of trench onto the main surface of p+ type monocrystalline silicon substrate. The thickness of a corner portion positioned on the upper end corner portion of the sidewall of trench in silicon oxide film is larger than the thickness of silicon oxide film positioned on the sidewall of trench. An n type polycrystalline silicon layer extending from the inside of trench onto the main surface of p+ type monocrystalline silicon substrate is formed on silicon oxide film. Thus, a semiconductor device having a trench structure with an improved breakdown voltage for an insulating layer positioned on an upper end corner portion of the sidewall of a trench is obtained.

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