Method of manufacturing a semiconductor device having a spacer

Details Method of manufacturing a semiconductor device having a spacer Method of manufacturing a semiconductor device having a spacer

1992-01-13

1993-12-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437228, 437235, 148DIG10, 148DIG102, H01L 21265

Patent

active

052683133

ABSTRACT:
A method of manufacturing a semiconductor device whereby an spacer is formed from a second layer in a fully self-registering manner after a layer portion of a first layer has been formed. For this purpose, the second layer and a masking layer are provided in that order, which masking layer has a greater thickness next to the layer portion than above it. The portion of the second layer situated above the layer portion and the spacer to be formed is then exposed in that the masking layer is etched back over at least substantially its entire surface. A portion of the masking layer then remains next to the layer portion, which masking layer portion is sufficiently thick for adequately protecting the subjacent portion of the second layer against the treatment which is subsequently carried out and by which the etching resistance of at least the top layer of the exposed portion of the second layer is increased. The non-treated portion of the second layer is then selectively etched relatively to the treated portion in order to form the spacer.

REFERENCES:
patent: 4689872 (1987-09-01), Appels et al.
patent: 5100813 (1992-03-01), Nihira et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device having a spacer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device having a spacer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having a spacer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2015444