Fishing – trapping – and vermin destroying
Patent
1990-11-09
1992-04-07
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 24, 437 27, 437190, 437192, 437978, 748DIG106, H01L 21283, H01L 21266
Patent
active
051028263
ABSTRACT:
According to the method of manufacturing a semiconductor device of the present invention, an insulation film is formed on a silicon substrate, and a resist film having a predetermined pattern is formed on the insulation film, followed by forming an opening on the insulation film with the resist film performing as a mask. Then, an impurity having conductivity are implanted into said silicon substrate with the resist film performing as a mask and silicon ions are implanted into the silicon substrate with the resist film performing as a mask. After that, the resist film is removed. Further, a refractory metal film which covers at least the opening is formed. Moveover, a diffusion layer which causes electrical activation of the impurity having conductivity is formed by annealing, followed by formation a silicide layer at where the surfaces of the silicon substrate and the metal film meet.
REFERENCES:
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4622735 (1986-11-01), Shibata
patent: 4683645 (1987-08-01), Naguib et al.
Wittmer, M., et al., "Barrier layers: Principles . . . ", J. Vac. Sci. Technol. A2(2), Apr.-Jun. 1984, pp. 273-279.
Motozima Toshiyo
Naruse Hiroshi
Ohshima Jiro
Taka Shin-ichi
Hearn Brian E.
Kabushiki Kaisha Toshiba
Quach T. N.
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