Fishing – trapping – and vermin destroying
Patent
1992-03-09
1993-08-17
Quach, T. N.
Fishing, trapping, and vermin destroying
437 24, 437 26, 437 27, 148DIG1, 148DIG147, H01L 2124, H01L 21265
Patent
active
052368726
ABSTRACT:
A method of manufacturing a semiconductor device in which a thin buried silicide layer is formed by implantation includes the step of first forming an amorphous layer by implantation, which layer is then converted into the buried silicide layer by a heat treatment. A sufficiently thin buried silicide layer, of about 10 nm thickness, can be obtained in this manner, and the resulting structure is suitable, for example, for the manufacture of a metal-base transistor.
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Dekempeneer Erik H. A.
Ottenheim Jozef J. M.
van Hoften Gerrit C.
van Ommen Alfred H.
Biren Steven R.
Quach T. N.
U.S. Philips Corp.
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