Fishing – trapping – and vermin destroying
Patent
1993-04-19
1994-07-26
Quach, T. N.
Fishing, trapping, and vermin destroying
437200, 437233, 148DIG19, 148DIG17, H01L 21283
Patent
active
053326920
ABSTRACT:
A sputtering technique is conducted within a sputtering device the inside of which is in the state of vacuum, whereby a second polycrystal silicon film (7) is deposited on a first polycrystal silicon film (3) on the surface of which a natural oxide film (4) exists. The inside of the sputtering device is maintained to be in the state of vacuum after the second polycrystal silicon film (7) is formed. With the same sputtering device, a metal silicide film (5) is deposited on the second polycrystal film under vacuum. When a silicon oxide film is formed on the silicide film, silicons to be oxidized are uniformly supplied through the silicide film. Therefore, the polycrystal silicon film and the silicide film are not separated from each other at the boundary face between them. Further, product yield rate is improved since it is not necessary to perform sputter etching.
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Mitsubishi Denki & Kabushiki Kaisha
Quach T. N.
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