Method of manufacturing a semiconductor device having a planariz

Details Method of manufacturing a semiconductor device having a planariz Method of manufacturing a semiconductor device having a planariz

1990-05-10

1991-05-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437978, 437 78, 156653, H01L 2131, H01L 2176

Patent

active

050156020

ABSTRACT:
A method of manufacturing a semiconductor device, in which a depression (1,2,3) in a surface (4) of a semiconductor substrate (5) is filled by covering it with a preplanarized filling layer (8,19,22) and a further planarization layer (9), after which the substrate (5) is brought into contact with an etchant, in which both layers (8,19,22) and (9) are etched at substantially the same rate. According to the invention, the preplanarized filling layer (8,19,22) is formed by covering the surface (4) with a layer of filling material (6) and then removing it beside the depression (1,2,3) over part of its thickness. Thus, the depression (1,2,3) is filled homogeneously in a comparatively simple manner with material of the filling layer (6).

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Sze, S. M. VLSI Technology, McGraw Hill, 1983, pp. 106-111.

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