Method of manufacturing a semiconductor device having a monocrys

Details Method of manufacturing a semiconductor device having a monocrys Method of manufacturing a semiconductor device having a monocrys

1993-12-02

1994-11-01

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 49, 437101, 437233, H01L 21265

Patent

active

053607562

ABSTRACT:
According to a method of manufacturing a semiconductor device, a monocrystal silicon layer can be formed easily without adversely affecting semiconductor elements. In the method of manufacturing the semiconductor device, a first polysilicon layer is formed on a gate oxide film layer on a silicon substrate, and then a resist is formed on a predetermined region of the first polysilicon layer. Using the resist as a mask, anisotropic etching is effected to expose the surface of the silicon substrate. Thereby, it is not necessary to form the resist directly on the gate oxide film layer, as is done in the prior art, and it is possible to prevent impurity such as sodium or phosphorus in the resist from entering the gate oxide film layer. Consequently, it is possible to prevent a disadvantage such as change of a threshold voltage of a memory cell transistor, which may be caused by the entry of impurity.

REFERENCES:
patent: 4748133 (1988-05-01), Griswold
patent: 4868619 (1989-09-01), Mukherjee et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device having a monocrys does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device having a monocrys, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having a monocrys will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802224