Method of manufacturing a semiconductor device having a mesa str

Details Method of manufacturing a semiconductor device having a mesa str Method of manufacturing a semiconductor device having a mesa str

1990-01-23

1990-12-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG26, 148DIG100, 148DIG106, 156644, 437 31, 437 99, 437133, 437962, 437944, H01L 2120, H01L 21265

Patent

active

049803123

ABSTRACT:
A semiconductor body (1) is provided by growing epitaxial layers of semiconductor material on a substrate placed within a processing chamber and forming a mesa structure (3) on an upper epitaxial layer (2). The mesa structure (3) is formed by epitaxially growing, with the semiconductor body (1) still within the processing chamber, a first layer (4) of a semiconductor material different from that of the upper layer (2) on the upper layer (2) and the opening a window (5) in the first layer (4) to expose an area (2a) of the upper layer (2). A further layer (6) of a semiconductor material different from that of the first layer (4) is then epitaxially grown on the first layer (4) and on the said area (2a) of the upper layer. The first layer (4) is then selectively etched so as to remove the first layer (4) and the part of the further layer (6) carried by the first layer ( 14) leaving the remainder (60a, 60b) of the further layer (6) in the window (5) to form the mesa structure (3).

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