Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Patent
1993-06-11
1999-03-30
Tsai, Jey
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
438601, H01L 2934
Patent
active
058888519
ABSTRACT:
A semiconductor device includes a specific circuit portion having a predetermined function and a spare redundant circuit portion having the same function as the specific circuit portion. The semiconductor device includes a silicon substrate (1), an interlayer insulating film (2), an LT fuse (3), interconnection layers (4), a testing electrode (5) and a protection film (6). The interlayer insulating film (2) has a groove (11) and is formed on the silicon substrate (1). The LT fuse (3) is formed of polysilicon and is located immediately below the bottom wall of the groove (11). The interconnection layers (4) are formed on the interlayer insulating film (2) with the groove (11) therebetween. The testing electrode (5) is spaced from the interconnection layers (4) and is formed on the interlayer insulating film (2). The protection film (6) is formed on the interlayer insulating film to cover surfaces of the interconnection layers (4) and expose a surface of the testing electrode (5). A laser beam is irradiated to a bottom wall of the groove (11) to fuse and remove a part of the LT fuse (3). This substitutes the specific part having a defect with the redundant circuit portion. In this operation, neither the interconnection layers (4) is damaged, nor short-circuit and breakage thereof are caused.
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Motonami Kaoru
Nagatomo Masao
Mitsubishi Denki & Kabushiki Kaisha
Tsai Jey
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