Method of manufacturing a semiconductor device forming a high co

Details Method of manufacturing a semiconductor device forming a high co Method of manufacturing a semiconductor device forming a high co

1993-12-10

1995-02-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, H01L 21265

Patent

active

053915097

ABSTRACT:
Impurities are introduced into a semiconductor substrate by using a gate electrode formed on the semiconductor substrate through an oxide film as a mask, and low concentration impurity regions are formed. Then, side walls are formed on the gate electrode. Next, after an insulating film is formed on the whole surface of the substrate by a CVD method, impurities are introduced by using the gate electrode and the side walls as a mask, and high concentration impurity regions are formed. Then, a thermal treatment of the substrate is performed, and after the low concentration impurity regions and the high concentration impurity regions are crystallized, an interlayer insulating film is formed.

REFERENCES:
patent: 5073514 (1991-12-01), Ito et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5217912 (1993-06-01), Ayukawa et al.
patent: 5268317 (1993-12-01), Schwalke et al.
patent: 5292671 (1994-03-01), Odanaka
patent: 5306655 (1994-04-01), Kurimoto

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