Method of manufacturing a semiconductor device comprising capaci

Details Method of manufacturing a semiconductor device comprising capaci Method of manufacturing a semiconductor device comprising capaci

1991-02-25

1992-06-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437195, 437201, 437978, H01L 21441

Patent

active

051224771

ABSTRACT:
A method of manufacturing a semiconductor device comprising a semiconductor body (3) with a surface (10) on which capacitors (2) are provided, which form memory elements, with a lower electrode (11) including platinum, a ferroelectric dielectric material (12) and an upper electrode (13) is presented. In the method according to the invention, the electrodes (11, 13) including platinum are formed by the successive deposition on a surface of a first layer (19, 26) comprising a metal from the group titanium, zirconium, hafnium or an alloy of these metals, a second layer (20, 27) comprising platinum, and a third layer (21, 28) comprising a metal from the group titanium, zirconium, hafnium, or an alloy of these metals, upon which the semiconductor body is heated in an atmosphere containing oxygen. The first metal layer ensures a good adhesion of the electrode, the second layer acts as the electrode proper, while the third metal layer counteracts adverse effects of the first layer. Semiconductor devices having electrodes with good adhesion and a smooth surface can be manufactured in such a way. As a result, the semicondcutor device is reliable, while switching of the capacitors (2) acting as memory elements between two polarization states takes place at a positive and a negative voltage of equal value.

REFERENCES:
patent: 3657029 (1972-04-01), Fuller
patent: 4423087 (1983-12-01), Howard et al.
patent: 4437139 (1984-03-01), Howard
patent: 4707897 (1987-11-01), Rohrer et al.
patent: 5005102 (1991-04-01), Larson

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