Method of manufacturing a semiconductor device comprising an ins

Details Method of manufacturing a semiconductor device comprising an ins Method of manufacturing a semiconductor device comprising an ins

1994-03-31

1995-01-03

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437913, 257330, 148DIG126, H01L 2144

Patent

active

053786556

ABSTRACT:
A mask (4) defining at least one window (4a) is provided on one major surface (1a) of a semiconductor body (1). The semiconductor body (1) is etched to define a groove (5) into a first region (2) of one conductivity type through a second region (3) of the opposite conductivity type. A relatively thin layer of gate insulator (6) is provided on the surface (5a) of the groove (5). A gate conductive region (7) of an oxidizable conductive material is provided within the groove (5) to define with the gate insulator layer an insulated gate structure (8) bounded by a conduction channel-defining area (30) of the second region (3). A step (15) in the surface structure is then defined by causing the insulated gate structure (8) to extend beyond the surrounding surface by oxidizing the exposed (7a) gate conductive material to define an insulating capping region (9) on the gate conductive region (3). A layer (10) is formed over the surface structure and etched anisotropically to leave portions (10a) of the layer on the side wall (8'a) of the step (15) defined by the insulated gate structure (8) and to define beneath the portions (10a) third regions (11) of the one conductivity type within the second region (3). An electrically conductive layer (12) is deposited to contact both the second and the third regions (3 and 11).

REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 4992390 (1991-02-01), Chang
patent: 5086007 (1992-02-01), Ueno
patent: 5270257 (1993-12-01), Shin
patent: 5275965 (1994-01-01), Manning
patent: 5298780 (1994-03-01), Harada

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device comprising an ins does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device comprising an ins, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device comprising an ins will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2211318