Method of manufacturing a semiconductor device comprising a sili

Details Method of manufacturing a semiconductor device comprising a sili Method of manufacturing a semiconductor device comprising a sili

1993-10-27

1995-01-24

Thomas, T.

Fishing, trapping, and vermin destroying

437 26, 437 29, 437 34, 437 45, H01L 2170

Patent

active

053842790

ABSTRACT:
A method of manufacturing a semiconductor device is set forth, comprising a silicon body (1) having a surface (4) where there are situated a number of semiconductor regions (5, 6) and field oxide regions (7). The semiconductor regions is formed, after the field oxide regions have been provided, by implantations of n-type and p-type dopants. In accordance with the invention the implantations with the n-type dopant (10, 11, 14), which are performed using an implantation mask (8) provided on the surface and comprising openings (9) at the area of a part of the semiconductor regions (5) to be formed, are combined with the implantations with the p-type dopant (12, 13, 15) which are carried out without using the implantation mask. Thus, the semiconductor regions (5, 6) are realised by means of a single implantation mask (8).

REFERENCES:
patent: 4027380 (1977-06-01), Deal et al.
patent: 4217149 (1980-08-01), Sawazaki
patent: 4411058 (1983-10-01), Chen
patent: 4422885 (1983-12-01), Brower et al.
patent: 4729964 (1988-03-01), Natsuaki et al.
patent: 4745083 (1988-05-01), Huie
patent: 4771014 (1988-09-01), Liou et al.
Sze, S. M. VLSI Technology, New York, McGraw-Hill, (1983), p. 485, lines 17-20; sections 11.5.1, 11.5.2, 11.5.3, 11.4.2; p. 488, lines 4-5.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device comprising a sili does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device comprising a sili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device comprising a sili will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1468464