Method of manufacturing a semiconductor device comprising a mesa

Details Method of manufacturing a semiconductor device comprising a mesa Method of manufacturing a semiconductor device comprising a mesa

1990-12-07

1992-07-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437127, 437133, 437944, 372 46, H01L 2120, H01L 21203, H01L 21205

Patent

active

051282763

ABSTRACT:
A method of manufacturing a semiconductor device, such as a semiconductor diode laser, is set forth to form a mesa and current blocking structure on either side of the mesa. In this technique a lift-off step is used to form a contact layer as a direct result of removing semiconductor layers. This is accomplished by using a selective etchant that removes overlying layers, but does not remove a subjacent layer which may be the contact layer. As a result, the growing process is economized by an inexpensive method having a high yield.

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