Method of manufacturing a semiconductor device comprising a circ

Details Method of manufacturing a semiconductor device comprising a circ Method of manufacturing a semiconductor device comprising a circ

1986-04-11

1990-01-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437967, H01L 21223

Patent

active

048913324

ABSTRACT:
The invention relates to a semiconductor device having a semiconductor body which comprises a circuit element having doped polycrystalline silicon.
The doping comprises carbon in a concentration higher than 1 ppm. Polysilicon thus doped has properties which are not influenced by temperature treatments of the semiconductor body. Dopant is gaseous unsaturated hydrocarbon, e.g. acetylene.

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Bloem et al., Appl. Phys. Lett. 40 (Apr. 1982), pp. 725-726.
Claassen et al., J. Electrochem. Soc.: Solid-State Science and Technology, 130 (Jul. 1983), pp. 1586-1592.

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