Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Patent
1998-01-07
2000-08-01
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
438592, 438643, 438683, H01L 2120
Patent
active
06096619&
ABSTRACT:
On a p.sup.+ diffused region which is to be a lower electrode of a capacitor, a silicon nitride film which is a capacitor insulating layer is formed. An upper electrode is formed on this silicon nitride film. The upper electrode has a non-doped polycrystalline silicon film and a silicide layer. Non-doped polycrystalline silicon film is formed in contact with silicon nitride film. Silicide layer is formed on a surface of non-doped polycrystalline silicon film. Thus, a capacitor structure is obtained in which a larger capacitance and a higher breakdown voltage can be assured, so that it would not operate inaccurately even when it is integrated to a higher degree.
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Higuchi Tetsuo
Yamamoto Fumitoshi
Chaudhuri Olik
Eaton Kurt
Mitsubishi Denki & Kabushiki Kaisha
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