Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1984-03-02
1985-11-19
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576T, 148 15, 148174, 148DIG3, 148DIG7, 148DIG25, 148DIG123, 148DIG169, 156612, 156DIG64, 156DIG67, 156DIG70, 156DIG73, H01L 21203, H01L 21324
Patent
active
045540306
ABSTRACT:
A monocrystalline layer of one semiconductor material is grown onto a surface of a monocrystalline semiconductor body by means of molecular beam epitaxy. During such growth, the semiconductor body is kept at such a low temperature that a non-monocrystalline layer is obtained. The non-monocrystalline layer is then converted by a heat treatment into a monocrystalline form. Accordingly, an abrupt junction between the two semiconductor materials is obtained.
REFERENCES:
patent: 3988172 (1976-10-01), Bachmann et al.
patent: 4039357 (1977-08-01), Bachmann et al.
Berkenblit et al., "Reduction of Stress in . . . Hetero-Epitaxial Layers", IBM Tech. Discl. Bull., vol. 12, No. 9, Feb. 1970, p. 1489.
Yagi et al., "Germanium and Silicon Film Growth . . . ", Jap. J. Appl. Physics, vol. 16, No. 2, Feb. 1977, pp. 245-251.
Greene et al., "Epitaxial Ge/GaAs Heterostructures . . . ", Appl. Phys. Lett., vol. 39, No. 3, Aug. 1, 1981, pp. 232-234.
Bhattacharyya et al., "Theoretical . . . Annealing of .alpha.-Ge . . . on GaAs", J. Phys., D: Appl. Physics, 16, 1983, pp. 2033-2037.
De Jong Tim
Douma Willem A. S.
Haisma Jan
Larsen Poul K.
Saris Frans W.
Miller Paul R.
Saba William G.
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