Fishing – trapping – and vermin destroying
Patent
1989-09-29
1991-08-06
Simmons, David
Fishing, trapping, and vermin destroying
437229, 437928, 156628, 1566591, H01L 21265, H01L 2100
Patent
active
050377671
ABSTRACT:
In the manufacture of a semiconductor device, e.g. a bipolar or MOS transistor, a narrow beam (4) of ions is deflected across a major surface of a semiconductor device body (1,2) to implant ions, e.g. a boron, into a region (3) of the body. In accordance with the invention a resist mask (5a) is obtained autoregistered with the implanted region (3) by effecting the implantation through a layer (5) of ion-sensitive resist thus exposed by the ion beam (4) in the area (5a) overlying the implanted region (3) at the same time as the implantation occurs into the body region (3). The non-exposed area of the layer (3) is afterwards removed by developing the resist, and the ion-exposed area (5a) is then used as a mask during a subsequent processing step, e.g. an etching or doping step, in the device manufacture. The implanted region (3) may be, e.g., a peripheral base region portion of a bipolar transistor or a parasitic-channel stopper below a field insulating layer (2) of an MOS integrated circuit.
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Johnson Lori-ann
Miller Paul R.
Simmons David
U.S. Philips Corporation
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