Semiconductor device manufacturing: process – Gettering of substrate
Reexamination Certificate
2006-08-15
2006-08-15
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Gettering of substrate
Reexamination Certificate
active
07091110
ABSTRACT:
A technique, where a semiconductor film having a crystal structure is obtained using a metal element that helps crystallization of the semiconductor film, then that metal element remained in the film is effectively removed, as a result variation among elements is reduced, is provided. In a process for forming a gettering site, a semiconductor film containing a rare-gas element is formed, then an anti-diffusion film for preventing diffusion of the rare-gas element is formed, thereby the metal element in another semiconductor film is effectively removed, particularly in a gettering that is a heating treatment at a high temperature of 600° C. or more.
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Stanley Wolf and Richard N. Tauber, Silicon Processing For The VLSI Era, 1986, Lattice Press, vol. 1, pp. 191-195.
Isaac Stanetta
Lebentritt Michael
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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