Method of manufacturing a semiconductor device by forming at lea

Fishing – trapping – and vermin destroying

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437 11, 437933, 148DIG128, H01L 21265

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active

052504468

ABSTRACT:
A mixture of at least two types of charged particles of ions having the same value obtained by dividing the electric charge of an ion by the mass of the ion, i.e., a mixture of charged particles including hydrogen molecular ions H.sub.2.sup.+ and deuterium ions D.sup.+, is accelerated in a charged particle accelerator. Since the mass spectrograph unit in the accelerator cannot divide the hydrogen molecular ions H.sub.2.sup.+ and the deuterium ion D.sup.+, both ions are accelerated together. When the hydrogen molecular ion H.sub.2.sup.+ collides against a silicon substrate, it is divided into two hydrogen ions 2H.sup.+. Since the hydrogen ion H.sup.+ and the deuterium ion D.sup.+ have different ranges in silicon, two regions including a great number of crystal defects are formed in the silicon substrate in one ion irradiating step. As a result, at least three regions of different lifetimes of carriers are formed at different depths of the semiconductor substrate.

REFERENCES:
patent: 3865633 (1975-02-01), Shannon et al.
patent: 4290825 (1981-09-01), Dearnaley et al.
patent: 4620211 (1986-10-01), Baliga et al.
patent: 4752818 (1988-06-01), Kushida et al.
patent: 4987087 (1991-01-01), Voss

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