Method of manufacturing a semiconductor device by forming a tung

Details Method of manufacturing a semiconductor device by forming a tung Method of manufacturing a semiconductor device by forming a tung

1980-04-29

1981-08-11

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156653, 156657, 204192SP, 357 67, 427 90, 427 91, 427 93, 427 94, 427 39, H01L 21285

Patent

active

042834392

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.

REFERENCES:
patent: 3664874 (1972-05-01), Epstein
patent: 3672983 (1972-06-01), DeWitt et al.
patent: 3785862 (1974-01-01), Grill
patent: 3833842 (1974-09-01), Cunningham et al.
patent: 4026742 (1977-05-01), Fujino
patent: 4128670 (1978-12-01), Gaensslen
Shaw et al., "Vapor-Deposited Tungsten as a Metallization and Interconnection Material for Silicon Devices" RCA Review, Jun. 1970.
Eisenmann, "Deposition of Silicon Nitride, " IBM TDB vol. 14, Jan. 1972.
Brown et al., "The P-Channel Refractory Metal Self-Registered MOSFET, " IEEE Transactions on Electron Devices, vol. ED-18, No. 10, Oct. 1971, pp. 931-934.
Engeler et al., "Performance of Refractory Metal Multilevel Interconnection Systems, " IEEE Transactions on Electron Devices, vol. ED-19, No. 1, Jan. 1972, pp. 54-56.

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