Method of manufacturing a semiconductor device by filling and pl

Fishing – trapping – and vermin destroying

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437228, 437229, 156643, 156646, H01L 2182

Patent

active

049160877

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of (a) depositing a first insulating film by an isotropic deposition method over the entire surface of a semiconductor substrate which is provided with a narrow trench having an opening width in submicrons and a broad trench having an opening width larger than 1 .mu.m so that the narrow and broad trenches are substantially filled with the first insulating film; (b) removing the first insulating film by an isotropic dry etching method; (c) depositing a second insulating film over the entire surface of the semiconductor substrate by an isotropic deposition method so that the narrow and broad trenches are substantially filled with the second insulating film; (d) forming a first resist layer on the broad trench filled with the second insulating film; (e) forming a second resist layer over the entire surface of the second insulating film and the first resist layer thereon; and (f) removing the first and second resist layers and the second insulating film by an anisotropic dry etching method until the surface of the semiconductor substrate is flattened.

REFERENCES:
patent: 4570325 (1986-02-01), Higuchi

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