Method of manufacturing a semiconductor device and semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257513, 257520, H01L 2972

Patent

active

059230738

ABSTRACT:
A manufacturing method of semiconductor devices and semiconductor devices isolated by a trench portion. The trench portion is refilled with a Si epitaxial growth layer. The trench has a first insulating layer on its side wall and a second insulating layer formed by the oxidation in the self-alignment manner, as a cap layer, on the top portion of the trench. A semiconductor device formed on the substrate is isolated by the trench. The excessive leakage currents created by the stress between the substrate and the Si epitaxial layer are decreased. The concentration of the field effect at the corner portion of the trench is suppressed by the cap layer.
The refilling step can be also made to a trench having the wider opening and another trench having the narrower opening simultaneously and uniformly.

REFERENCES:
patent: 4688069 (1987-08-01), Joy et al.
patent: 4980747 (1990-12-01), Hutter et al.
patent: 5061653 (1991-10-01), Teng

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor device and semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device and semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device and semiconductor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2278090

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.