Method of manufacturing a semiconductor device and semiconductor

Details Method of manufacturing a semiconductor device and semiconductor Method of manufacturing a semiconductor device and semiconductor

1976-10-08

1977-10-04

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204192E, 204192EC, C25D 502, C23C 1500

Patent

active

040522695

ABSTRACT:
A semiconductor device of the diode type having a metal-semiconductor contact, and method of manufacturing such a device.
The cut-off frequency of such a diode may be a few Teraherz while it is possible by realizing coplanar contacts to assemble the device directly on hyperfrequency micro circuits.
The device is suitable for mixing circuits and of course also for detection purposes. The method also permits the manufacture of PIN diodes.
Application: hyperfrequency diodes. FIG. 8b.

REFERENCES:
patent: 3669760 (1972-06-01), Rein et al.
patent: 3808108 (1974-04-01), Herb et al.
patent: 3880684 (1975-04-01), Abe

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