Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-10-11
2009-10-20
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S092000, C438S093000, C438S094000, C438S167000, C438S172000, C438S181000, C438S186000, C438S188000, C438S191000, C438S235000, C257SE21066, C257SE21403
Reexamination Certificate
active
07605017
ABSTRACT:
Methods of manufacturing a semiconductor device and resulting products. The semiconductor device includes a semiconductor substrate, a hetero semiconductor region hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a heterojunction of the hetero semiconductor region, a gate electrode formed on the gate insulation layer, an electric field alleviation region spaced apart from a heterojunction driving end of the heterojunction that contacts the gate insulation layer by a predetermined distance and contacting the semiconductor substrate and the gate insulation layer, a source electrode contacting the hetero semiconductor region and a drain electrode contacting the semiconductor substrate. A mask layer is formed on the hetero semiconductor region, and the electric field alleviation region and the heterojunction driving end are formed by using at least a portion of the first mask layer.
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Hayashi Tetsuya
Hoshi Masakatsu
Tanaka Hideaki
Yamagami Shigeharu
Ahmadi Mohsen
Mulpuri Savitri
Nissan Motor Co,. Ltd.
Young & Basile
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