Method of manufacturing a semiconductor device and device manufa

Details Method of manufacturing a semiconductor device and device manufa Method of manufacturing a semiconductor device and device manufa

1974-08-20

1976-04-20

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29578, 156 17, 357 9, 357 91, 148187, H01L 2126

Patent

active

039516946

ABSTRACT:
A method of manufacturing a semiconductor device by means of doping via a mask. According to the invention a mask is used which is manufactured by providing one or more "first" apertures in a masking layer, after which islands of an isotropically growing material are grown in the said apertures, after which the parts of the masking layer present between the islands are removed and finally the said islands themselves are removed.

REFERENCES:
patent: 3413531 (1968-11-01), Leith
patent: 3431150 (1969-03-01), Dolan, Jr. et al.
patent: 3457632 (1969-07-01), Dolan, Jr. et al.
patent: 3589949 (1971-06-01), Nelson
patent: 3704177 (1972-11-01), Beale
patent: 3713922 (1973-01-01), Lepselter

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device and device manufa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device and device manufa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device and device manufa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1584602