Metal working – Method of mechanical manufacture – Electrical device making
Patent
1984-10-04
1986-10-28
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Electrical device making
29589, 29590, 29578, 29571, 29577C, 156653, H01L 2190
Patent
active
046190392
ABSTRACT:
A method of manufacturing a semiconductor device having narrow, coplanar, silicon electrodes which are separated from each other by grooves or slots having a width in the submicron range. The electrodes are alternatively covered by an oxide and by an oxidation-preventing layer, such as silicon nitride. According to the invention, a first and second electrode which are both covered with one of these layers, and which enclose a third electrode covered by the other of these layers, are first interconnected inside a connection region. Two of the three electrodes are separated from the connection region by etching. By selective etching, overlapping contact windows are provided on all three electrodes, and inside the contact windows etching of the groove is omitted.
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Appels Johannes A.
Maas Henricus G. R.
Osinski Kazimierz
Slotboom Jan W.
Auyang Hunter L.
Hearn Brian E.
Miller Paul R.
U.S. Philips Corporation
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