Method of manufacturing a semiconductor device and apparatus...

Details Method of manufacturing a semiconductor device and apparatus... Method of manufacturing a semiconductor device and apparatus...

2007-04-03

2007-04-03

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S708000, C438S709000, C438S710000

Reexamination Certificate

active

10767229

ABSTRACT:
Precision in an etching process is to be improved. A detecting unit404detects a variation of plasma emission intensity at a plurality of wavelengths (an emission band having an intensity peak in the proximity of 358 nm and an emission band having an intensity peak in the proximity of 387 nm) during a dry etching process being performed on either of a nitrogen-containing film formed on a semiconductor substrate or a non-nitrogen film provided in direct contact with the nitrogen-containing film in an etching apparatus402.An arithmetic processing unit406performs calculation based on detected variation. A control unit410determines an endpoint of the dry etching process in consideration of the calculation result.

REFERENCES:
patent: 5668019 (1997-09-01), Kobayashi et al.
patent: 6376262 (2002-04-01), Kempa et al.
patent: 6703285 (2004-03-01), Arakawa et al.
patent: 6919259 (2005-07-01), Chang et al.
patent: 2002-319619 (2002-10-01), None

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