Method of manufacturing a semiconductor device and an apparatus

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 89, 216 38, B08B 600, B44C 122

Patent

active

060986387

ABSTRACT:
In a CMP process for flatting a surface of a film on a semiconductor wafer, ionized water is used as rinsing liquid in the post-polishing step performed after the main CMP polishing step. With ionized water as rinsing liquid, abrasive particles adhered to the film surface during the main polishing step are removed.

REFERENCES:
patent: 4184908 (1980-01-01), Lackner et al.
patent: 5078801 (1992-01-01), Malik
patent: 5320706 (1994-06-01), Blackwell
patent: 5571373 (1996-11-01), Krishna et al.
patent: 5578193 (1996-11-01), Aoki et al.
patent: 5578529 (1996-11-01), Mullins
patent: 5605487 (1997-02-01), Hileman et al.
patent: 5626509 (1997-05-01), Hayashi
patent: 5643406 (1997-07-01), Shimomura et al.
patent: 5645737 (1997-07-01), Robinson et al.
patent: 5711818 (1998-01-01), Jain
"Novel Electrolysis--Inonized--Water Cleaning Technique For The Chemical-Mechanical Polishing (CMP) Process"; Aoki et al; 1994; abstract only; 1994 Symposium on VLSI Tech. Digest of Tech. Papers.
N. Miyashita et al., "A New Post CMP Cleaning Method For Trench Isolation Process", Chemical-Mechanical-Polishing (CMP-MIC 96), p. 161.
"Postchemical-Mechanical Planarization Cleanup Process for Interlayer Dielectric Films"; Roy et. al.; pp. 216-225; Jan. 1995; Roy et. al.; J. Elect. Soc.; vol. 142 (1).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor device and an apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device and an apparatus , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device and an apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1140616

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.