Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2004-07-08
2009-12-01
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S745000, C438S754000, C134S001100
Reexamination Certificate
active
07625826
ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (1) and a semiconductor body (11) which comprises at least one semiconductor element, wherein, after formation of the element, a layer structure is formed which comprises at least one electrically insulating layer (2) or an electrically conductive layer (3), wherein an opening is formed in the layer structure with the aid of a patterned photoresist layer (4) and an etching process, wherein residues are formed on the surface of the semiconductor body (11) during the etching process, and wherein the photoresist layer (4) is ashed, after the etching process, by means of a treatment with an oxygen-containing compound, after which the surface is subjected to a cleaning operation using a cleaning agent comprising a diluted solution of an acid in water and being heated to a temperature above room temperature, thereby causing the residues formed to be removed. According to the invention, sulphuric acid is chosen as the acid for the cleaning agent.
REFERENCES:
patent: 4116714 (1978-09-01), Basi
patent: 6136767 (2000-10-01), Hineman et al.
patent: 6235406 (2001-05-01), Uzoh
patent: 6352082 (2002-03-01), Mohindra et al.
patent: 6541321 (2003-04-01), Buller
patent: 6635582 (2003-10-01), Yun et al.
patent: 6833081 (2004-12-01), Chen et al.
patent: 6964929 (2005-11-01), Narayanan et al.
patent: 7078351 (2006-07-01), Chiu et al.
patent: 7159599 (2007-01-01), Verhaverbeke et al.
patent: 2001/0023109 (2001-09-01), Yamamoto
patent: 2001/0027799 (2001-10-01), Bergman
patent: 0 789 389 (1997-08-01), None
patent: WO 97/50019 (1997-12-01), None
Rink Ingrid Annemarie
Vroom Reinoldus Bernardus Maria
NXP B.V.
Vinh Lan
LandOfFree
Method of manufacturing a semiconductor device and an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device and an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device and an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4067707