Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2008-01-01
2008-01-01
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C257S620000, C438S458000, C438S460000
Reexamination Certificate
active
10527777
ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device (10) in which, in a semiconductor body (1) with a temporary substrate (2), at least one semiconductor element (3) is formed which, on a side of the semiconductor body (1) opposite to the substrate (2), is provided with at least one connection region (4), and, on the said side, a dielectric (5) is formed and patterned to leave free the connection region (4), after which a metal layer (6) is deposited over the dielectric (5) so as to be in contact with the connection region (4), which metal layer (6) serves as an electric connection conductor of the connection region (4), after which the temporary substrate (2) is removed and the metal layer (6) also serves as a substrate of the device (10). According to the invention, before the metal layer (6) is deposited, there is formed, around the patterned part of the dielectric (5) and around the semiconductor element (3), an annular region (7) of a resin having a larger thickness than the dielectric (5), and the metal layer (6) is deposited within the rectangular annular region (7). In this way, an individual device (10) can readily be formed after the metal layer (6) has been deposited, preferably by pushing the device (10) out of the region (7). Preferably, a (different) photoresist is chosen for the dielectric (5) and the region (7). The invention also comprises a semiconductor device (10) obtained in this way.
REFERENCES:
patent: 5879964 (1999-03-01), Paik et al.
patent: 5950070 (1999-09-01), Razon et al.
patent: 5953588 (1999-09-01), Camien et al.
patent: 6326240 (2001-12-01), Liaw
patent: 6444499 (2002-09-01), Swiss et al.
patent: 6455353 (2002-09-01), Lin
patent: 2002/0168798 (2002-11-01), Glenn et al.
patent: 2005/0227415 (2005-10-01), Farnworth et al.
Dekker Ronald
Havens Ramon Jacob
Van Der Putten Jan Baptist Petrus Henricus
Barnes Seth
Im Paul
Koninklijke Philips Electronics N. V.
Wilczewski Mary
LandOfFree
Method of manufacturing a semiconductor device and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device and a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3951605