Method of manufacturing a semiconductor device and...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Encapsulating

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S754000

Reexamination Certificate

active

06878573

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device (10), wherein a semiconductor element (1) provided with a number of connection regions (2) is fitted between a first, electroconductive plate (3) and a second plate (4), wherein two connection conductors (3A,3B) are formed, from the first plate (3), for the two connection regions (2A,2B) of the element (1), wherein a passivating encapsulation (5) is provided between the plates (3, 4) and around the element (1), and wherein the device (10) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M).In a method according to the invention, the connection conductors (3A,3B) are formed by providing a mask (6) on the first conducting plate (3) in such a manner that a part (3C) of the plate (3) situated between the connection regions (2A,2B) remains exposed, which part is subsequently removed by etching. Such a method enables a very compact discrete or at least semi-discrete semiconductor device (10) to be readily obtained at low cost, while a high yield is achieved. In a preferred embodiment, also further parts (3D) of the conducting plate (3) situated at the location where the device (10) is to be sawn, cut or broken remain uncovered by the mask (6) and are removed during etching.

REFERENCES:
patent: 6602737 (2003-08-01), Wu
patent: 0920058 (1999-06-01), None
patent: A09027591 (1997-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3432638

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.