Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1983-10-24

1984-10-09

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 29571, 29577C, H01L 21225

Patent

active

044759649

ABSTRACT:
This invention provides a semiconductor device, which has a high impurity concentration diffusion region such as a drain diffusion region and a resistor comprising a polycrystalline silicon layer (which may be a load of a driver MOS transistor), and in which part of the resistor is in direct contact with the high impurity concentration diffusion region. This invention also provides a method of manufacturing a semiconductor device, which comprises the steps of forming a gate electrode and drain and source diffusion regions along the principal surface of a semiconductor substrate, then forming a polycrystalline silicon resistor layer of a comparatively low impurity concentration such that it is in direct contact with a diffusion region, and subsequently causing impurity diffusion from the diffusion region through thermal treatment to obtain ohmic contact between the diffusion region and resistor layer.

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"Two Static 4K Clocked and Nonclocked RAM Designs", T. R. O'Connell et al., IEEE on SSC, vol. SC-12, No. 5, pp. 497-501, Oct. 1977.

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