Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1993-09-21

1995-04-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 97, 437 98, 437 53, 148DIG60, 117935, H01L 2120

Patent

active

054058031

ABSTRACT:
In a semiconductor device and a method of manufacturing the same according to the present invention, after As and C are introduced to a semiconductor substrate, a semiconductor layer is formed on the semiconductor substrate. When first and second semiconductor layers are to be sequentially formed on a semiconductor substrate, an impurity concentration of As or Sb serving as an impurity of the first semiconductor layer is 10 times or more an impurity concentration of the second semiconductor layer, and the second semiconductor layer has a thickness of 4 to 10 .mu.m.

REFERENCES:
patent: 4170501 (1979-10-01), Khajezadeh
patent: 4247859 (1981-01-01), Rai-Choudhury
patent: 4379726 (1983-04-01), Kumamaru et al.
E. H. Bogardus, et al. "Gettering Technique and Structure" IBM Tech. Disc. Bulletin vol. 16, No. 4, pp. 1066-1067 (Sep. 1973).
R. S. Hockett, "Front side Gettering for N/N.sup.+ (5b)" Proc. Electrochem Society 89-9 (ULSI Sci. Technol. 1989) pp. 190-203.
M. Tamura, "Interactions between Oxygen Atoms and Defects by High-Energy Ion Implantation" Defect Control in Semiconductivity vol. 1, (Dec. 1989) pp. 453-464.

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