Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1990-04-03

1991-08-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437162, 437909, 437 46, 437158, 148DIG10, 148DIG31, 148DIG44, H01L 21331, H01L 2122

Patent

active

050396234

ABSTRACT:
A semiconductor body (10) has at one major surface (15) a step (14) defining a device area (13) of the semiconductor body above a buried region (12) provided within the semiconductor body (10). A protective insulating layer (24) is provided on a side wall (14a) of the step (14) and an insulating region (22) on an area (15a) of the one major surface adjoining the side wall (14a) of the step. Silicon is deposited over the one surface (15) with the anti-oxidation layer (24) on the side wall (14a) of the step (14) to define over the area (15a) of the one surface (15) an intermediate silicon region (23c) which is isolated from the side wall (14a) of the step and which leaves a window area (14'a) of the side wall (14a) exposed. The protective insulating layer (24a) is then removed from the window area (14'a) of the side wall (14a). A silicon region (25c) doped with impurities is defined over the insulating region (22) and adjoining the side wall (14a) of the step (14), and the dopant impurities caused to diffuse from the doped silicon region (25c) into the device area (13) via the window area (14'a) to define a contact region (28) for contacting a device region (29) within the device area (13).

REFERENCES:
patent: 4757027 (1988-07-01), Vora
patent: 4824799 (1989-04-01), Komatsu
patent: 4851362 (1989-07-01), Suzuki
patent: 4871684 (1989-10-01), Glang et al.

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