Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Patent
1996-09-23
2000-01-11
Bowers, Charles
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
438 30, 438587, H01L 2182
Patent
active
060135425
ABSTRACT:
In a method of manufacturing a semiconductor device, a gate wiring and a source wiring of a thin film transistor in the course of manufacture are connected, and are finally divided, so that it is possible to prevent breakage of a gate insulating film due to influence of plasma at the formation of various insulating films or conductive films. Specifically, openings are formed at every formation of interlayer insulating films to first layer wirings to be finally divided, and dummy electrodes not serving as electrodes are formed in the openings. When patterning a final electrode, openings are further formed in the dummy electrodes, and the first layer wirings are divided through the openings.
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Koyama Jun
Ogata Yasushi
Teramoto Satoshi
Yamazaki Shunpei
Bowers Charles
Hawranek Scott J.
Semiconductor Energy Laboratory Co,. Ltd.
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