Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1996-03-11

1998-12-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438151, 438635, 257 72, H01L 2184

Patent

active

058496041

ABSTRACT:
A resist mask is formed on an electrode mainly made of aluminum. An anodic oxide film is formed on the electrode excluding the masked region by performing anodization in an electrolyte. A contact hole can easily be formed in the masked region because the anodic oxide film is not formed there. By removing a portion of the gate electrode which corresponds to an opening in forming a contact electrode, the gate electrode can be divided at the same time as the contact electrode is formed.

REFERENCES:
patent: 5146301 (1992-09-01), Yamamura et al.
patent: 5359206 (1994-10-01), Yamamoto et al.
patent: 5422239 (1995-06-01), Konya
patent: 5576225 (1996-11-01), Zhang et al.
patent: 5581382 (1996-12-01), Kim
patent: 5648826 (1997-07-01), Song et al.

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