Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1987-09-30

1989-09-26

Lacey, David L.

Fishing, trapping, and vermin destroying

437 83, 437173, 437942, 437973, 148DIG90, 156610, 15662072, H01L 21263

Patent

active

048700312

ABSTRACT:
In a method of manufacturing a semiconductor device comprising melting an amorphous or polycrystalline first semiconductor layer formed on the surface of a first dielectric layer by irradiating energy rays thereon, and converting the same into single crystals by the subsequent lowering of the temperature and forming a second dielectric layer and a second semiconductor layer on the first semiconductor layer. Energy rays are irradiated under the condition capable of melting the first semiconductor layer through the second semiconductor layer and the second dielectric layer and, after the completion of the conversion into single crystals, the second semiconductor layer and the second dielectric layer are eliminated through etching.

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Coliage et al, "The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulating Films" Japanese Journal of Applied Physics, vol. 22, pp. 205-208 (1983).

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